For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.

The potential barrier of a $P-N$ junction is $0.5 \ V$. The thickness of the depletion layer is $5.0 \times 10^{-7} \ m$. Calculate the electric field.

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

In the case of forward biasing of a $PN-$ junction,which one of the following figures correctly depicts the direction of flow of charge carriers?

When a reverse bias is applied to a p-n junction, it . . . . . . .

Suppose the thickness of the depletion layer in a $P-N$ junction is $10^{-6} \ m$ and the value of the depletion barrier is $0.1 \ V$. Then the electric field is ....... $V \ m^{-1}$.