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(D) $1$. Arsenic $(As)$ is a pentavalent impurity (Group $15$). When germanium $(Ge)$ is doped with arsenic,it provides an extra electron,making $X$ a

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$X$ is $N-$ type,$Y$ is $P-$ type and the junction is reverse biased

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(D) $1$. Arsenic $(As)$ is a pentavalent impurity (Group $15$). When germanium $(Ge)$ is doped with arsenic,it provides an extra electron,making $X$ an $N-$ type semiconductor.$2$. Indium $(In)$ is a trivalent impurity (Group $13$). When germanium $(Ge)$ is doped with indium,it creates a hole,making $Y$ a $P-$ type semiconductor.$3$. The junction formed is a $PN-$ junction where $X$ ($N-$ side) is connected to the positive terminal of the battery and $Y$ ($P-$ side) is connected to the negative terminal.$4$. Since the $N-$ side is at a higher potential than the $P-$ side,the junction is reverse biased.

$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

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