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(C) Step $1$: An $n$-type semiconductor is formed by doping pure silicon (a group $14$ element) with pentavalent impurity atoms (group $15$ elements),

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Phosphorous and Indium respectively

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(C) Step $1$: An $n$-type semiconductor is formed by doping pure silicon (a group $14$ element) with pentavalent impurity atoms (group $15$ elements), such as Phosphorous $(P)$ or Arsenic $(As)$.Step $2$: $A$ $p$-type semiconductor is formed by doping pure silicon with trivalent impurity atoms (group $13$ elements), such as Indium $(In)$, Aluminium $(Al)$, or Boron $(B)$.Step $3$: Comparing the options, Phosphorous is a pentavalent atom (for $n$-type) and Indium is a trivalent atom (for $p$-type). Therefore, option $C$ is correct.

An $n$-type and $p$-type semiconductor can be obtained by respectively doping pure silicon with

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