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(C) In a $p-n$ junction diode, the depletion region width increases with an increase in reverse bias voltage.When the reverse bias voltage is increase

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reverse-bias is increased

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(C) In a $p-n$ junction diode, the depletion region width increases with an increase in reverse bias voltage.When the reverse bias voltage is increased to a critical value known as the breakdown voltage, the electric field across the junction becomes very strong.This strong electric field causes a large number of charge carriers to be generated (either through Zener breakdown or Avalanche breakdown), leading to a sudden increase in the reverse current.Therefore, breakdown occurs when the reverse bias is increased to this critical value.

For a $p-n$ junction diode, breakdown voltage occurs when

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