In $P$-type semiconductors,the majority and minority charge carriers are respectively:

Suppose an $n$-type wafer is created by doping $Si$ crystal having $5 \times 10^{28} \text{ atoms/m}^3$ with $1 \text{ ppm}$ concentration of $As$. On the surface,$200 \text{ ppm}$ Boron is added to create a $p$-region in this wafer. Considering $n_i = 1.5 \times 10^{16} \text{ m}^{-3}$,$(i)$ Calculate the densities of the charge carriers in the $n$ and $p$ regions. $(ii)$ Comment on which charge carriers would contribute largely to the reverse saturation current when the diode is reverse biased.

Doping of intrinsic semiconductor is done:

Holes are charge carriers in

Which of the following statements is correct for an $n$-type semiconductor?

Write the difference between intrinsic and extrinsic semiconductors.