In extrinsic $P$ and $N$-type semiconductor materials,the ratio of the impurity atoms to the pure semiconductor atoms is about

$A$ semiconductor is placed in an electric field. Let the number density of charge carriers be $n$ and the average drift velocity be $v$. If the temperature is increased,then:

The net charge on an $N-$type semiconductor is

In the energy band diagram of a material shown in the figure,the open circles and filled circles denote holes and electrons,respectively. The material is:

$A$ pure semiconductor crystal has $5 \times 10^{22}$ atoms per $cm^3$. It is doped by $1$ ppm concentration of pentavalent element. The number of holes in the doped semiconductor is (given that $n_i = 1.5 \times 10^{10} cm^{-3}$):

When a small amount of antimony impurity is added to a germanium crystal,what happens?