On increasing the reverse bias to a large value in a $P-N$ junction diode,current

Which one of the following is reverse-biased?

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

Suppose the thickness of the depletion layer in a $P-N$ junction is $10^{-6} \ m$ and the value of the depletion barrier is $0.1 \ V$. Then the electric field is ....... $V \ m^{-1}$.

What is a diode?

In the given circuit,the current is $0.1 \ A$. The resistance of the $P-N$ junction is .... $\Omega$.