The $I-V$ characteristics of a photodiode for different illumination intensities $I_1, I_2, I_3$ and $I_4$ are shown in the figure. Which of the following represents the maximum intensity?

Which semiconductor device converts electrical energy into light?

Assertion $(A)$: $Si$ and $GaAs$ are the preferred materials for solar cells.
Reason $(R)$: Both these materials have energy band gaps much below the energy level corresponding to the maximum solar irradiance in the solar spectrum.

$A$ $CCD$ camera is fabricated using a semiconducting material having a band gap of $3 \ eV$. The wavelength of light it can detect is nearly (in $nm$)

Identify the correct circuit diagrams for the normal operation from the following.

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $2480 \; nm$ is incident on it. The band gap in $eV$ for the semiconductor is