The dc common emitter current gain of an $n-p-n$ transistor is $50$. The potential difference applied across the collector and emitter of a transistor used in $CE$ configuration is $V_{CE} = 2 \ V$. If the collector resistance $R_{C} = 4 \ k\Omega$,the base current $(I_{B})$ and the collector current $(I_{C})$ are:

  • A
    $I_{B} = 10 \ \mu A, I_{C} = 0.5 \ mA$
  • B
    $I_{B} = 0.5 \ \mu A, I_{C} = 10 \ mA$
  • C
    $I_{B} = 5 \ \mu A, I_{C} = 1 \ mA$
  • D
    $I_{B} = 1 \ \mu A, I_{C} = 0.5 \ mA$

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