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(A) Among the given statements,$(B)$ and $(C)$ are incorrect.$(B)$ Silicon $(Si)$ and germanium $(Ge)$ are group $14$ elements and are intrinsic semic

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$B$,$C$

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(A) Among the given statements,$(B)$ and $(C)$ are incorrect.$(B)$ Silicon $(Si)$ and germanium $(Ge)$ are group $14$ elements and are intrinsic semiconductors,not impurities.$(C)$ Phosphorus $(P)$ and arsenic $(As)$ are group $15$ elements. They have $5$ valence electrons. When doped into group $14$ elements,$4$ electrons form covalent bonds,and the $5$th electron remains free. Thus,they are electron-rich impurities,not electron-deficient.

Which of the following statements are not correct?
$(A)$ Diode is a combination of $n$-type and $p$-type semiconductors.
$(B)$ Silicon or germanium is electron rich impurity.
$(C)$ Phosphorus and arsenic are electron deficient impurities.
$(D)$ Schottky defect decreases the density of the crystal.

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Which of the following statements are not correct?$(A)$ Diode is a combination of $n$-type and $p$-type semiconductors.$(B)$ Silicon or germanium is electron rich impurity.$(C)$ Phosphorus and arsenic are electron deficient impurities.$(D)$ Schottky defect decreases the density of the crystal.