The barrier potential of a p-n junction depen | vedclass

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(D) The barrier potential $(V_b)$ of a $p-n$ junction is determined by the following factors:$1$. Type of semiconductor material: The band gap energy

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$1, 2$ and $3$

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(D) The barrier potential $(V_b)$ of a $p-n$ junction is determined by the following factors:$1$. Type of semiconductor material: The band gap energy differs for different materials. For $Si$,$V_b \approx 0.7 \ V$,and for $Ge$,$V_b \approx 0.3 \ V$.$2$. Amount of doping: The concentration of impurity atoms affects the width of the depletion region and the potential difference across it.$3$. Temperature: The barrier potential decreases with an increase in temperature because the intrinsic carrier concentration increases,which affects the Fermi level and the built-in potential.Therefore,all three factors $(1, 2, 3)$ influence the barrier potential.

The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

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The barrier potential of a $p-n$ junction depends on:$(1)$ Type of semiconductor material$(2)$ Amount of doping$(3)$ TemperatureWhich one of the following is correct?