The given circuit has two ideal diodes connected as shown in the figure. The current flowing through the resistance $R_1$ will be.....$ A$

  • A
    $1.43$
  • B
    $3.13$
  • C
    $2.5$
  • D
    $10$

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The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

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The built-in potential of a $p-n$ junction diode is $0.7 \,V$. If the diode is forward biased and the applied voltage is $0.3 \,V$, the effective barrier height is (in $\,V$)

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In the following electrical circuit, the reading in the milliammeter is (Take knee voltage of silicon diode $= 0.7 \text{ V}$) (in $\text{ mA}$)

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