The width of the depletion region in a $p-n$ junction diode is

When a $PN$ junction diode is reverse biased,

When a reverse bias is applied to a $p-n$ junction diode,what happens to the potential barrier?

Which of the diode circuits shows the correct biasing used for the measurement of the dynamic resistance of a $p$-$n$ junction diode?

Assuming in forward bias condition there is a voltage drop of $0.7 \text{ V}$ across a silicon diode, the current through diode $D_1$ in the circuit is . . . . . . $\text{mA}$. (Assume all diodes in the given circuit are identical)

When a $p-n$ junction diode is reverse biased,then the width of the depletion layer will