The depletion layer in the $P-N$ junction region is caused by

The example for non-ohmic resistance is

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

The electrical resistance of the depletion layer is large because

The energy of a photon in a monochromatic light of wavelength $621 \ nm$ matches with the band gap of a semiconducting material. Then the minimum energy required to create an electron-hole pair from the semiconductor is
[Take $hc = 1242 \ eV-nm$,where $h$ is Planck's constant and $c$ is speed of light in vacuum] (in $eV$)

$A$ semiconductor is damaged by a strong current due to: